US 12,230,507 B2
Method of manufacturing semiconductor devices using directional process
Ya-Wen Yeh, Taipei (TW); Yu-Tien Shen, Tainan (TW); Shih-Chun Huang, Hsinchu (TW); Po-Chin Chang, Taichung (TW); Wei-Liang Lin, Hsinchu (TW); Yung-Sung Yen, New Taipei (TW); Wei-Hao Wu, Hsinchu (TW); Li-Te Lin, Hsinchu (TW); Pinyen Lin, Rochester, NY (US); and Ru-Gun Liu, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 25, 2023, as Appl. No. 18/139,257.
Application 17/403,850 is a division of application No. 16/383,539, filed on Apr. 12, 2019, granted, now 11,094,556, issued on Aug. 17, 2021.
Application 18/139,257 is a continuation of application No. 17/403,850, filed on Aug. 16, 2021, granted, now 11,651,972.
Claims priority of provisional application 62/692,230, filed on Jun. 29, 2018.
Prior Publication US 2023/0260803 A1, Aug. 17, 2023
Int. Cl. H01L 21/3213 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/32137 (2013.01) [H01L 21/32139 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
measuring surface topography of an area of a film formed over a substrate; and
performing a local etching on the area by using directional etching,
wherein an etching condition of the directional etching is adjusted according to the measured surface topography.