US 12,230,506 B2
Area selective organic material removal
Mikko Ritala, Espoo (FI); Chao Zhang, Helsinki (FI); and Markku Leskelä, Espoo (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on May 17, 2023, as Appl. No. 18/319,330.
Application 18/319,330 is a continuation of application No. 17/353,491, filed on Jun. 21, 2021, granted, now 11,694,903.
Claims priority of provisional application 63/132,046, filed on Dec. 30, 2020.
Claims priority of provisional application 63/043,604, filed on Jun. 24, 2020.
Prior Publication US 2023/0307247 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01)
CPC H01L 21/31138 (2013.01) [H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01L 21/28562 (2013.01); H01L 21/30604 (2013.01); H01L 21/31051 (2013.01); H01L 21/31127 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of selectively removing carbon-containing material from a substrate, the method comprising:
providing a substrate in a reaction space, the substrate having a first area of patterned structure, a second area of patterned structure, and a carbon-containing film over the first and the second areas of the patterned structure, wherein the first area of the patterned structure comprises a removal-enhancing material, and wherein the removal-enhancing material comprises at least one of a metal or a combustion catalyst; and
exposing the substrate to a vapor phase reactant to cause the removal-enhancing material to enhance removal of a portion of the carbon-containing film from over the first area of the patterned structure relative to over the second area of the patterned structure.