US 12,230,505 B2
Etching apparatus
Akihiro Tsuji, Miyagi (JP); Masanobu Honda, Miyagi (JP); and Hikaru Watanabe, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Feb. 22, 2022, as Appl. No. 17/677,752.
Application 17/677,752 is a division of application No. 16/069,995, abandoned, previously published as PCT/JP2017/018340, filed on May 16, 2017.
Claims priority of application No. 2016-100603 (JP), filed on May 19, 2016.
Prior Publication US 2022/0181162 A1, Jun. 9, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01); H01L 21/823431 (2013.01); H01L 2221/1063 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
at least one processing container;
a substrate support inside the processing container which supports a substrate during processing;
a port through which the substrate is transferred into the processing container;
a first power supply which supplies a plasma generating power to the processing container at a first frequency;
a second power supply which supplies a biasing power to the substrate support at a second frequency which is different from the first frequency;
a gas supply configured to selectively supply a plurality of gases including a fluorocarbon gas, an oxygen gas, a hydrogen gas, and at least one of an inert gas or a noble gas;
an exhaust device which includes a vacuum pump; and
a controller;
wherein the apparatus is configured to form a fluorocarbon deposit on the substrate, and after forming the fluorocarbon deposit, to perform an etching using fluorocarbon radicals of the deposit to etch the substrate at a location below the fluorocarbon deposit,
wherein the controller is configured to:
(a) receive the substrate on the substrate support, the substrate having a first region and a second region, the second region including a recess, the first region filling the recess and also extending over and covering the second region, the substrate further including a mask above the first region, the mask having an opening width larger than an opening width of the recess;
(b) perform a first etching through the mask in an upper portion of the first region to remove part of the upper portion of the first region and form an opening in the upper part of the first region at a location above the second region and stop the first etching prior to exposing the second region;
(c) after the first etching, perform a selective etch of the first region such that, during the selective etch, a portion of the first region in the recess is etched, the selective etch including:
(i) performing a first step using the fluorocarbon gas from the gas supply to form the fluorocarbon deposit on the substrate by supplying the fluorocarbon gas and an oxygen gas during the first step during the first step and by suppling at least one of an inert gas and a noble gas during the first step;
(ii) after the first step, performing a second step of etching the first region in the recess in which the fluorocarbon radicals from the fluorocarbon deposit etch the first region in the recess to remove portions of the first region from the recess and stopping supply of the fluorocarbon gas and the oxygen gas during the second step while continuing to supply the at least one of an inert gas and a noble gas.