US 12,230,504 B2
Plasma etching method and plasma etching apparatus
Junji Kataoka, Kawasaki (JP); and Shuichi Kuboi, Yokohama (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 25, 2021, as Appl. No. 17/411,475.
Claims priority of application No. 2021-002664 (JP), filed on Jan. 12, 2021.
Prior Publication US 2022/0223430 A1, Jul. 14, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma etching method, comprising:
etching a silicon-comprising film by using plasma of a hydrofluorocarbon gas,
wherein the hydrofluorocarbon gas comprises

OG Complex Work Unit Chemistry