| CPC H01L 21/266 (2013.01) [H01L 21/263 (2013.01); H01L 21/26513 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01)] | 9 Claims |

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1. A method of manufacturing a semiconductor device, the method comprising:
preparing a semiconductor substrate having a main surface, and forming a device element structure on the main surface;
forming a protective film on the main surface of the semiconductor substrate to protect the device element structure, the protective film having an opening therein;
forming at least one material film in a predetermined pattern on the main surface of the semiconductor substrate and in the opening of the protective film, the at least one material film and the protective film being separate from each other by a distance of less than 1 mm;
forming a resist film on the main surface of the semiconductor substrate, covering the protective film, and completely covering the at least one material film in such a manner that the at least one material film is within the resist film in a top view of the semiconductor substrate, the resist film having an opening therein corresponding to an inducing region for impurity defects; and
inducing the impurity defects in the semiconductor substrate with both the resist film and the at least one material film on the main surface of the semiconductor substrate, the resist film, but not the at least one material film, being a mask.
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