| CPC H01L 21/0228 (2013.01) [C23C 16/45525 (2013.01); H01L 21/02362 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01)] | 18 Claims |
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1. A method for manufacturing a semiconductor device, comprising:
loading a semiconductor substrate including a silicon oxide film into a chamber;
depositing a seed layer on the silicon oxide film by supplying a first silicon source material;
supplying a purge gas;
depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material and subsequently supplying a silicon source material having a material composition identical to the first silicon source material;
depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material; and
forming an air gap by using a cleaning process, the cleaning process including removing portions of the silicon oxide film and of the seed layer.
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