US 12,230,497 B2
Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
Aurélie Kuroda, Chofu (JP); and Atsuki Fukazawa, Tama (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 31, 2022, as Appl. No. 18/092,219.
Application 18/092,219 is a division of application No. 17/037,481, filed on Sep. 29, 2020, granted, now 11,610,774.
Claims priority of provisional application 62/909,766, filed on Oct. 2, 2019.
Prior Publication US 2023/0143580 A1, May 11, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02274 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02211 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process, the method comprising:
providing a non-planar substrate including one or more horizontal surfaces and one or more vertical surfaces into a reaction chamber;
contacting the non-planar substrate with a vapor phase reactant comprising a silicon component, a carbon component, and a hydrogen component;
contacting the non-planar substrate with a reactive species generated from a plasma produced from a gas comprising an oxygen precursor and a noble gas; and
forming a silicon oxide film either selectively over the horizontal surfaces of the non-planar substrate or selectively over the vertical surfaces of the non-planar substrate.