1. A method for forming a silicon oxide or a carbon doped silicon oxide film on a substrate comprising:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ aryl group; wherein R² is selected from hydrogen, a linear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from a linear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ to C₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, a C₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylene group, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group; p and q in Formula E equal 1 or 2, and for formula D the precursor is selected from the group consisting of 1-tert-butyl-1-aza-2,5-disilacyclopentane, 1-tert-pentyl-1-aza-2,5-disilacyclopentane, 1-phenyl-1-aza-2,5-disilacyclopentane, 1-tert-butyl-1-aza-2,6-disilacyclohexane, 1-tert-pentyl-1-aza-2,6-disilacyclohexane, 1-tert-phenyl-1-aza-2,6-disilacyclohexane, in a vapor deposition to form the film on the substrate.