	US 12,230,495 B2
	Method of depositing silicon nitride films
James S. Sims, Tigard, OR (US); Shane Tang, West Linn, OR (US); Vikrant Rai, Sherwood, OR (US); Andrew McKerrow, Lake Oswego, OR (US); and Huatan Qiu, Portland, OR (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/285,814
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Oct. 11, 2019, PCT No. PCT/US2019/055920 § 371(c)(1), (2) Date Apr. 15, 2021, PCT Pub. No. WO2020/081397, PCT Pub. Date Apr. 23, 2020.
Claims priority of provisional application 62/748,085, filed on Oct. 19, 2018.
Prior Publication US 2021/0384028 A1, Dec. 9, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)

CPC H01L 21/0217 (2013.01) [C23C 16/45536 (2013.01); H01J 37/32174 (2013.01); H01L 21/02208 (2013.01); H01L 21/0228 (2013.01); H01L 21/67098 (2013.01)]

17 Claims

1. A method for depositing a silicon nitride layer on a stack, comprising providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises:

dosing the stack with a silicon halide containing precursor by providing a silicon halide containing precursor gas forming a silicon precursor deposition;

providing an N₂plasma conversion after dosing the stack to convert the silicon precursor deposition to a silicon nitride deposition; and

providing an H₂plasma conversion after providing the N₂plasma conversion and before a subsequent dosing of the silicon halide containing precursor to form a hydrogenated surface of the silicon nitride deposition to make the silicon nitride deposition more reactive to the silicon halide containing precursor than the silicon nitride deposition without the hydrogenated surface, wherein the subsequent dosing of the stack with the silicon halide containing precursor deposits another silicon precursor deposition on the hydrogenated surface.