US 12,230,485 B2
Sputtering target for magnetic recording medium
Tomonari Kamada, Ibaraki (JP); and Ryousuke Kushikibi, Ibaraki (JP)
Assigned to TANAKA KIKINZOKU KOGYO K.K., Tokyo (JP)
Appl. No. 17/628,065
Filed by TANAKA KIKINZOKU KOGYO K.K., Tokyo (JP)
PCT Filed Jul. 16, 2020, PCT No. PCT/JP2020/028611
§ 371(c)(1), (2) Date Jan. 18, 2022,
PCT Pub. No. WO2021/010490, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 2019-132859 (JP), filed on Jul. 18, 2019.
Prior Publication US 2022/0262608 A1, Aug. 18, 2022
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); G11B 5/65 (2006.01)
CPC H01J 37/3429 (2013.01) [C23C 14/3407 (2013.01); G11B 5/656 (2013.01); H01J 37/3426 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A sputtering target for a magnetic recording medium, comprising:
a metal phase and an oxide phase,
wherein the metal phase contains, based on total metal phase components of the sputtering target for a magnetic recording medium, 1 mol % or more and 30 mol % or less of Pt and 0.5 mol % or more and 10 mol % or less of at least one or more selected from Mn and V, with the balance being Co and incidental impurities,
wherein the oxide phase contains O and one or more element(s) selected from a group consisting of: B, V, Ru, Ti, Si, Ta, Cr, Nb, Mn, Co, Ni, Zn, Y, Mo, W, La, Ce, Nd, Sm, Eu, Gd, Yb, Lu, and Zr,
wherein the oxide phase contains at least B, and
wherein, the sputtering target contains, based on the sputtering target for the magnetic recording medium as a whole, 25 vol % or more and 40 vol % or less of the oxide phase.