| CPC H01J 37/321 (2013.01) [C23C 16/52 (2013.01); H01J 37/32091 (2013.01); H01J 37/3244 (2013.01); H01L 21/308 (2013.01); H01L 21/67069 (2013.01)] | 19 Claims |
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1. A substrate processing apparatus comprising:
a process container in which a process gas is plasma-excited;
a gas supply system configured to supply the process gas into the process container; and
a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, the coil being configured to supply high frequency power,
wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section,
wherein the partial section of the first winding section includes the first grounding point, and
wherein the coil is configured such that other sections of the coil except for the first winding section are not arranged between the first winding section and the outer periphery of the process container.
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