US 12,230,455 B2
Method of depositing a perovskite material
Brett Akira Kamino, Oxfordshire (GB); and Laura Miranda Perez, Oxfordshire (GB)
Assigned to Oxford Photovoltaics Limited, Oxfordshire (GB)
Filed by OXFORD PHOTOVOLTAICS LIMITED, Oxfordshire (GB)
Filed on Jun. 22, 2023, as Appl. No. 18/339,599.
Application 18/339,599 is a continuation of application No. 15/735,740, granted, now 11,728,098, previously published as PCT/GB2016/051743, filed on Jun. 10, 2016.
Claims priority of application No. 1510351 (GB), filed on Jun. 12, 2015.
Prior Publication US 2023/0420192 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01G 9/20 (2006.01); C23C 18/12 (2006.01); H01G 9/00 (2006.01); H01L 31/0236 (2006.01); H01L 31/0725 (2012.01); H01L 31/074 (2012.01); H10K 30/15 (2023.01); H10K 30/87 (2023.01); H10K 71/16 (2023.01); H01L 31/0256 (2006.01); H10K 102/10 (2023.01)
CPC H01G 9/2009 (2013.01) [C23C 18/1204 (2013.01); H01G 9/0036 (2013.01); H01L 31/02363 (2013.01); H01L 31/0725 (2013.01); H01L 31/074 (2013.01); H10K 30/151 (2023.02); H10K 30/87 (2023.02); H10K 71/164 (2023.02); H01L 2031/0344 (2013.01); H10K 2102/103 (2023.02); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11)] 23 Claims
OG exemplary drawing
 
1. A method of producing a photovoltaic device, the photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the perovskite material comprises a perovskite of formula (I): [A][B][X]3, wherein [A] comprises at least one monovalent cation, [B] comprises at least one divalent inorganic cation, and [X] comprises at least one halide ion, the method comprising forming a surface that has a roughness average (Ra), or root mean square roughness (Rrms) of greater than 50 nm, and wherein the rough surface comprises a surface texture comprising one of pyramids and inverted pyramids, subsequently depositing on said surface a perovskite layer, wherein depositing the perovskite layer comprises:
using vapor deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material on the rough surface; and
subsequently, using solution deposition to treat the substantially continuous and conformal solid layer with one or more further precursor compounds,
wherein the one or more initial precursor compounds and the one or more further precursor compounds are selected from the group consisting of:
(i) a compound comprising a divalent inorganic cation B and a halide anion X, and
(ii) a compound comprising a monovalent cation A and a halide anion X,
with the proviso that:
when the one or more initial precursor compounds comprises a compound comprising a divalent inorganic cation B and a halide anion X, then the one or more further precursor compounds comprises a compound comprising a monovalent cation A and a halide anion X, and
when the one or more initial precursor compounds comprise a compound comprising a monovalent cation A and a halide anion X, then the one or more further precursor compounds comprise a compound comprising a divalent inorganic cation B and a halide anion X;
thereby reacting the one or more initial precursor compounds and the one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface.