US 12,230,444 B2
Dielectric material, device including the same, and method of preparing the dielectric material
Hyeon Cheol Park, Hwaseong-si (KR); Daejin Yang, Seoul (KR); Doh Won Jung, Seoul (KR); Taewon Jeong, Yongin-si (KR); and Giyoung Jo, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 6, 2022, as Appl. No. 17/858,552.
Claims priority of application No. 10-2021-0122077 (KR), filed on Sep. 13, 2021.
Prior Publication US 2023/0154679 A1, May 18, 2023
Int. Cl. H01G 4/10 (2006.01); C01G 33/00 (2006.01); H01G 4/30 (2006.01)
CPC H01G 4/10 (2013.01) [C01G 33/006 (2013.01); H01G 4/30 (2013.01); C01P 2002/34 (2013.01); C01P 2002/54 (2013.01); C01P 2002/72 (2013.01); C01P 2006/32 (2013.01); C01P 2006/40 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A dielectric material, comprising:
a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.