US 12,230,358 B2
Semiconductor device and electronic device
Takanori Matsuzaki, Kanagawa (JP); Tatsuya Onuki, Kanagawa (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 18/043,103
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Aug. 23, 2021, PCT No. PCT/IB2021/057699
§ 371(c)(1), (2) Date Feb. 27, 2023,
PCT Pub. No. WO2022/049448, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 2020-149505 (JP), filed on Sep. 6, 2020.
Prior Publication US 2023/0317125 A1, Oct. 5, 2023
Int. Cl. G11C 11/40 (2006.01); G11C 7/10 (2006.01); G11C 11/4096 (2006.01)
CPC G11C 7/1096 (2013.01) [G11C 11/40 (2013.01); G11C 11/4096 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor, a second transistor, a ferroelectric capacitor, and a first capacitor,
wherein a first gate of the first transistor is electrically connected to a first terminal of the ferroelectric capacitor,
wherein a first terminal of the first transistor is electrically connected to a second gate of the first transistor and a first terminal of the second transistor, and
wherein a second terminal of the second transistor is electrically connected to a second terminal of the ferroelectric capacitor and a first terminal of the first capacitor.