CPC G11C 29/021 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0658 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] | 12 Claims |
1. A method of operating a semiconductor device, the method comprising:
performing a pre-sensing operation on selected memory cells; and
performing a main sensing operation on the selected memory cells,
wherein the performing of the main sensing operation includes precharging first sensing nodes of page buffers connected to memory cells having a threshold voltage higher than an auxiliary read voltage which is applied during the pre-sensing operation among the selected memory cells based on a result of the pre-sensing operation.
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