US 12,230,337 B2
Non-volatile memory device having a fuse type memory cell array
Seongjun Park, Suwon-si (KR); Soyeon Kim, Seoul (KR); Sungbum Park, Seongnam-si (KR); and Keesik Ahn, Hwaseong-si (KR)
Assigned to SK keyfoundry Inc., Cheongju-si (KR)
Filed by SK keyfoundry Inc., Cheongju-si (KR)
Filed on Jan. 13, 2023, as Appl. No. 18/096,788.
Claims priority of application No. 10-2022-0071268 (KR), filed on Jun. 13, 2022.
Prior Publication US 2023/0402116 A1, Dec. 14, 2023
Int. Cl. G11C 17/00 (2006.01); G11C 7/24 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01)
CPC G11C 17/16 (2013.01) [G11C 7/24 (2013.01); G11C 17/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
an eFuse cell array in which unit cells of different types are alternately disposed,
wherein each of the unit cells of different types comprises a PN diode, a first NMOS transistor, and a fuse,
wherein a first type unit cell and a second type unit cell are connected to each other through a common node, and
wherein the first type unit cell and the second type unit cell are disposed side by side in a horizontal direction relative to the common node to form a bilaterally symmetrical structure.