US 12,230,328 B2
Semiconductor device
Hyun Seo, Goyang-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 20, 2022, as Appl. No. 17/868,900.
Claims priority of application No. 10-2021-0164339 (KR), filed on Nov. 25, 2021; and application No. 10-2022-0014634 (KR), filed on Feb. 4, 2022.
Prior Publication US 2023/0162797 A1, May 25, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC G11C 16/10 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a cell area including
a plurality of word lines stacked on a substrate,
at least one ground select line between the plurality of word lines and the substrate, and
a plurality of channel structures extending in a first direction, perpendicular to the substrate, and passing through the plurality of word lines and the at least one ground select line; and
a peripheral circuit area including peripheral circuits configured to
control the cell area, and
input a program voltage to at least a portion of the plurality of word lines in an order of approaching the substrate along the first direction,
input a first ground select bias voltage to the at least one ground select line during a first program time for inputting a first program voltage to a program word line among the plurality of word lines, and
input a second ground select bias voltage having a magnitude different from a magnitude of the first ground select bias voltage to the at least one ground select line during a second program time for inputting a second program voltage having a magnitude different from a magnitude of the first program voltage to the program word line.