| CPC G11C 13/004 (2013.01) [G11C 11/1673 (2013.01); G11C 11/54 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2211/5634 (2013.01)] | 19 Claims |
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1. A device with a neural network, comprising:
a plurality of synaptic memory cells, disposed along a first output line, configured to generate a column signal based on resistive memory elements and input signals being received through a plurality of input lines, each of the plurality of synaptic memory cells comprising a resistive memory element having either one of a first resistance value or a second resistance value;
a plurality of reference memory cells, disposed along a reference line with sharing the plurality of input lines with the plurality of synaptic memory cells respectively, configured to generate a reference signal based on reference memory elements and the input signals, each of the plurality of reference memory cells comprising a reference memory element having the second resistance value different from the first resistance value; and
an output circuit configured to generate an output signal, for the first output line, indicating a difference between the column signal and the reference signal,
wherein the output circuit is configured to generate, as the output signal, a current corresponding to an integer multiple of a net current that is a difference between a first current based on a resistive memory element with the first resistance value and a second current based on a resistive memory element with the second resistance value.
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