US 12,230,318 B2
Memory device including a word line with portions with different sizes in different metal layers
Yi-Hsin Nien, Hsinchu (TW); Wei-Chang Zhao, Hsinchu (TW); Chih-Yu Lin, Taichung (TW); Hidehiro Fujiwara, Hsinchu (TW); Yen-Huei Chen, Hsinchu County (TW); and Ru-Yu Wang, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 22, 2022, as Appl. No. 17/871,635.
Application 17/871,635 is a continuation of application No. 17/035,118, filed on Sep. 28, 2020, granted, now 11,404,113.
Claims priority of provisional application 63/040,537, filed on Jun. 18, 2020.
Prior Publication US 2022/0359002 A1, Nov. 10, 2022
Int. Cl. G11C 11/419 (2006.01); G11C 5/06 (2006.01); G11C 11/412 (2006.01)
CPC G11C 11/419 (2013.01) [G11C 5/06 (2013.01); G11C 11/412 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first word line configured to transmit a first word line signal to a first set of memory cells, wherein a first portion of the first word line is formed in a first metal layer, a second portion of the first word line is formed in a second metal layer above the first metal layer, and a third portion of the first word line is formed in a third metal layer below the second metal layer, wherein the third portion of the first word line is overlapped with the second portion of the first word line; and
a second word line configured to transmit a second word line signal to a second set of memory cells, wherein a first portion of the second word line is formed in the first metal layer, and a second portion of the second word line is formed in the second metal layer,
wherein the first portion, the second portion, and the third portion of the first word line have sizes that are different from each other, and the first portion and the second portion of the second word line have sizes that are different from each other,
wherein the size of the third portion of the first word line is smaller than the size of the first portion of the first word line,
wherein the second portion of the first word line is partially overlapped with the second portion of the second word line.