US 12,230,312 B2
Memory device and defense method thereof
Changhwi Park, Suwon-si (KR); Junyoung Ko, Suwon-si (KR); and Jungmin Bak, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 28, 2023, as Appl. No. 18/191,039.
Claims priority of application No. 10-2022-0074180 (KR), filed on Jun. 17, 2022; and application No. 10-2022-0114831 (KR), filed on Sep. 13, 2022.
Prior Publication US 2023/0410875 A1, Dec. 21, 2023
Int. Cl. G11C 11/40 (2006.01); G11C 11/406 (2006.01); G11C 11/4078 (2006.01)
CPC G11C 11/40622 (2013.01) [G11C 11/40615 (2013.01); G11C 11/4078 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A defense method of a memory device, the defense method comprising:
executing, by a processor, computer readable program instructions embodied in a non-transitory storage medium to perform operations comprising:
obtaining a plurality of defense types to refresh a row of a memory cell array that is subjected to an attack;
determining respective operation times of the defense types; and
performing a refresh operation for the row of the memory cell array by switching among the defense types based on the respective operation times that were determined.