US 12,230,308 B2
Non-local antiferromagnetic memory storage
James G. Analytis, Berkeley, CA (US); Shannon C. Haley, Oakland, CA (US); and Eran Maniv, Ramat Raziel (IL)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed by THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed on Nov. 10, 2022, as Appl. No. 18/054,318.
Claims priority of provisional application 63/277,720, filed on Nov. 10, 2021.
Prior Publication US 2023/0147503 A1, May 11, 2023
Int. Cl. G11C 11/16 (2006.01); H10N 50/20 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10N 50/20 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An electrically switchable antiferromagnetic device, the device comprising: (a) a device body with at least one neck extending radially from the device body, said device body formed from crystalline FexNbS2; (b) one or more write in electrodes mounted to said device body, said write in electrodes configured to be electrically coupled to a source of current; and (c) one or more read out electrodes mounted to said neck of said device body, said read out electrode configured to measure a resistance state of said device body at said neck; (d) wherein an antiferromagnetic order of said device body rotates with the application of current to said write in electrode from said current source.