US 12,230,307 B2
Performance of magnetic channel junctions
Peng Zhang, Los Angeles, CA (US); and Runzi Chang, Saratoga, CA (US)
Assigned to Marvell Asia Pte Ltd, Singapore (SG)
Filed by Marvell Asia Pte Ltd, Singapore (SG)
Filed on Jan. 27, 2022, as Appl. No. 17/585,622.
Claims priority of provisional application 63/142,996, filed on Jan. 28, 2021.
Prior Publication US 2022/0238147 A1, Jul. 28, 2022
Int. Cl. G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a magnetic tunnel junction (MTJ), comprising:
a first ferromagnetic (FM) layer, which is configured to have a magnetic spin in a first spin direction, and to retain the first spin direction while the MTJ is subjected to an electrical current in a first direction or in a second direction opposite the first direction;
a second FM layer, which is configured to have the magnetic spin selectively altered between the first spin direction and a second spin direction, in response to altering the electrical current between the first direction and the second direction, respectively; and
a stack of tunnel barrier (TB) layers, the stack comprising: (i) a first TB layer having a polycrystalline structure, the first TB layer being disposed over the first FM layer, and (ii) a second TB layer having a monocrystalline structure, the second TB layer being formed of a same material as the first TB layer and being disposed between the first TB layer and the second FM layer; and
first and second electrodes electrically connected to the first and second FM layers, respectively.