the drive circuit comprises a first transistor, the first transistor comprises a first active layer, and the first active layer comprises an oxide semiconductor; and

the drive circuit further comprises a first capacitor, and one capacitor plate of the first capacitor is disposed in a same layer as the first active layer;

wherein the drive circuit comprises a pixel circuit, the pixel circuit comprises a data writing transistor, a drive transistor, and a node potential adjustment capacitor, wherein the node potential adjustment capacitor is disposed in series between a gate of the data writing transistor and a gate of the drive transistor; and the first capacitor comprises the node potential adjustment capacitor.