US 12,229,652 B2
Two-terminal metastable mixed-conductor memristive devices
Kevin W. Brew, Niskayuna, NY (US); Talia S. Gershon, White Plains, NY (US); Seyoung Kim, Pohang (KR); and Jerry D. Tersoff, Rockland, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 22, 2021, as Appl. No. 17/208,370.
Application 17/208,370 is a division of application No. 15/605,185, filed on May 25, 2017, granted, now 11,003,981.
Prior Publication US 2021/0209445 A1, Jul. 8, 2021
Int. Cl. G11C 13/00 (2006.01); G06N 3/04 (2023.01); G06N 3/065 (2023.01); G06N 3/084 (2023.01); G11C 11/54 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC G06N 3/04 (2013.01) [G06N 3/065 (2023.01); G06N 3/084 (2013.01); G11C 11/54 (2013.01); G11C 13/0007 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10N 70/20 (2023.02); H10N 70/826 (2023.02); H10N 70/8836 (2023.02); G11C 2013/0076 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/51 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for setting a resistance, comprising:
applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device, wherein the memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material, wherein each metastable layer comprises a conductive portion with a first lithium ion concentration and an insulator portion with a second lithium ion concentration.