US 12,229,488 B2
Phase shifter circuit, phase shifter layout and method of forming the same
Chi-Hsien Lin, Hsinchu (TW); Ho-Hsiang Chen, Hsinchu (TW); Hsien-Yuan Liao, Hsinchu (TW); Tzu-Jin Yeh, Hsinchu (TW); and Ying-Ta Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 6, 2022, as Appl. No. 17/833,436.
Application 17/833,436 is a division of application No. 16/442,178, filed on Jun. 14, 2019, granted, now 11,354,481.
Claims priority of provisional application 62/692,425, filed on Jun. 29, 2018.
Prior Publication US 2022/0300694 A1, Sep. 22, 2022
Int. Cl. G03F 1/70 (2012.01); G03F 1/36 (2012.01); G06F 30/398 (2020.01); H03H 11/20 (2006.01)
CPC G06F 30/398 (2020.01) [G03F 1/36 (2013.01); G03F 1/70 (2013.01); H03H 11/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A phase shifter comprising:
a first transistor comprising:
a first gate terminal configured to receive a first voltage, the first transistor configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage; and
a second transistor coupled to the first transistor, the second transistor comprising:
a second gate terminal configured to receive a second voltage, the second transistor configured to adjust a second capacitance of the phase shifter responsive to the second voltage, the second gate terminal including a first polysilicon portion and a second polysilicon portion extending in a first direction, and the first polysilicon portion and the second polysilicon portion being positioned along opposite edges of an active region of the first transistor and the second transistor.