	US 12,229,438 B2
	Storage device, memory system comprising the same, and operation method thereof
Dong-Woo Kim, Suwon-si (KR); Songho Yoon, Yongin-si (KR); Jeong-Woo Park, Hwaseong-si (KR); Dong-Min Kim, Hwaseong-si (KR); and Kyoung Back Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 3, 2023, as Appl. No. 18/149,560.
Application 18/149,560 is a continuation of application No. 16/901,332, filed on Jun. 15, 2020, granted, now 11,573,732.
Claims priority of application No. 10-2019-0094002 (KR), filed on Aug. 1, 2019.
Prior Publication US 2023/0147477 A1, May 11, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)

CPC G06F 3/0656 (2013.01) [G06F 3/0614 (2013.01); G06F 3/0622 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)]

20 Claims

1. A storage device configured to communicate with a host by using a universal flash storage (UFS) interface, the storage device comprising:

a nonvolatile memory device including a turbo write buffer area and a user storage area; and

a memory controller configured to read data from the turbo write buffer or the user storage area in response to a read request from the host, and to transfer the read data and attribute information about the read data to the host,

wherein the turbo write buffer includes a first buffer area in which stored data are prohibited from moving to the user storage area, and a second buffer area in which stored data are allowed to move to the user storage area,

wherein the attribute information includes location information indicating in which one of the user storage area, the first buffer area, and the second buffer area at least part of the read data is located.