US 12,229,418 B2
Method for operating memory device
Kyungduk Lee, Suwon-si (KR); Youn-Soo Cheon, Suwon-si (KR); and Daehyeon Jo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 25, 2023, as Appl. No. 18/101,232.
Claims priority of application No. 10-2022-0070226 (KR), filed on Jun. 9, 2022.
Prior Publication US 2023/0400992 A1, Dec. 14, 2023
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0625 (2013.01) [G06F 3/0634 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for operating a memory device comprising:
performing a first setting operation on a first operation, the first operation including a read operation;
reading map data after the first setting operation; and
performing a second setting operation on a second operation,
wherein the read operation is an SLC read, and
wherein the performing the first setting operation on the first operation comprises:
reading setting data for the first operation from a memory cell array and storing the setting data for the first operation from the memory cell array in a page buffer;
verifying validity of the setting data stored in the page buffer; and
storing the setting data having passed through the verification of validity in a buffer.