US 12,229,030 B2
Multi-non-volatile memory solid state drive block-level failure prediction with separate log per non-volatile memory
Nima Elyasi, San Jose, CA (US); and Changho Choi, San Jose, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 11, 2022, as Appl. No. 17/964,013.
Application 17/964,013 is a continuation of application No. 17/093,620, filed on Nov. 9, 2020, granted, now 11,500,752.
Claims priority of provisional application 63/076,370, filed on Sep. 9, 2020.
Claims priority of provisional application 63/073,923, filed on Sep. 2, 2020.
Claims priority of provisional application 63/073,926, filed on Sep. 2, 2020.
Prior Publication US 2023/0037270 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 11/30 (2006.01); G06F 3/06 (2006.01); G06F 11/07 (2006.01)
CPC G06F 11/3034 (2013.01) [G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0655 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 3/0679 (2013.01); G06F 11/076 (2013.01); G06F 11/0772 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a first storage media to store a first data, the first storage media of a first storage type;
a second storage media to store a second data, the second storage media of a second storage type different from the first type;
a controller to manage access to data on the first storage media and the second storage media;
storage to store a first log data for the first storage media and a second log data for the second storage media; and
a circuit configured to identify a block including a first property based at least in part on the first log data or the second log data.