US 12,228,859 B2
Pattern formation methods
Choong-Bong Lee, Westborough, MA (US); Stefan J. Caporale, Marlborough, MA (US); Jason A. DeSisto, Hopkinton, MA (US); Jong Keun Park, Shrewsbury, MA (US); Cong Liu, Shrewsbury, MA (US); Cheng-Bai Xu, Southborough, MA (US); and Cecily Andes, Newton, MA (US)
Assigned to Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed by Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed on Dec. 19, 2018, as Appl. No. 16/225,551.
Application 16/225,551 is a continuation of application No. 14/927,354, filed on Oct. 29, 2015, abandoned.
Claims priority of provisional application 62/073,769, filed on Oct. 31, 2014.
Prior Publication US 2019/0204742 A1, Jul. 4, 2019
Int. Cl. G03F 7/11 (2006.01); C08F 220/18 (2006.01); C08F 220/28 (2006.01); C09D 133/08 (2006.01); C09D 133/14 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01)
CPC G03F 7/11 (2013.01) [C08F 220/1804 (2020.02); C08F 220/283 (2020.02); C09D 133/08 (2013.01); C09D 133/14 (2013.01); G03F 7/0046 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0397 (2013.01); G03F 7/0752 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/327 (2013.01); G03F 7/38 (2013.01); C08F 220/281 (2020.02)] 11 Claims
 
1. A pattern formation method, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent;
(c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the matrix polymer is free of fluorine and silicon and the additive polymer comprises a unit containing a fluorine atom, wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition;
(d) exposing the photoresist layer to activating radiation;
(e) heating the substrate in a post-exposure bake process; and
(f) developing the exposed photoresist layer with an organic solvent developer.