| CPC G03F 1/24 (2013.01) | 11 Claims |
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1. A reflective mask blank, which is a binary reflective mask blank, comprising, in order:
a substrate;
a multilayer reflective film configured to reflect EUV light; and
a pattern film,
wherein the pattern film has a laminated structure comprising a total of L layers each having a different refractive index, wherein L is a natural number of 2 or more, and
when an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as ki, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as di (nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as λ (nm), and Pi is defined as 1−exp(−2π/λ*diki), the following formula (1) is satisfied:
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