a substrate;

a gate line and a data line intersecting with each other and disposed on the substrate, the gate line extending in a first direction and the data line extending in a second direction;

first through third thin-film transistors (TFTs) disposed on the substrate; and

first and second sub-pixel electrodes disposed above the first through third TFTs,

wherein

the first TFT includes a first source electrode electrically connected to the data line, a first drain electrode electrically connected to the first sub-pixel electrode, and a first channel between the first source electrode and the first drain electrode,

the second TFT includes a second source electrode electrically connected to the data line, a second drain electrode electrically connected to the second sub-pixel electrode, and a second channel formed in a first bar-shaped region between the second source electrode and the second drain electrode,

the third TFT includes a third source electrode electrically connected to a sustain electrode, the second drain electrode, and a third channel formed in a second bar-shaped region between the third source electrode and the second drain electrode,

a length direction of the second channel extending in the first direction is same as a length direction of the third channel extending in the first direction,

portions of both the second drain electrode and the second source electrode closest to the second channel extend in the second direction, and

portions of both the second drain electrode and the third source electrode closest to the third channel extend in the second direction.