US 12,228,768 B2
Fabrication process control in optical devices
Weiwei Song, San Jose, CA (US); Chan-Hong Chern, Palo Alto, CA (US); Chih-Chang Lin, San Jose, CA (US); Stefan Rusu, Sunnyvale, CA (US); and Min-Hsiang Hsu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 8, 2022, as Appl. No. 18/063,186.
Application 18/063,186 is a continuation of application No. 17/150,628, filed on Jan. 15, 2021, granted, now 11,525,957.
Claims priority of provisional application 63/002,499, filed on Mar. 31, 2020.
Prior Publication US 2023/0105446 A1, Apr. 6, 2023
Int. Cl. G02B 6/124 (2006.01); B29D 11/00 (2006.01); G02B 6/122 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/124 (2013.01) [B29D 11/00663 (2013.01); G02B 6/1228 (2013.01); G02B 6/132 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12197 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming an unpatterned thermal oxide layer on a substrate;
depositing a non-thermal oxide layer comprising a first refractive index on the unpatterned thermal oxide layer;
patterning the non-thermal oxide layer to form a trench on the unpatterned thermal oxide layer;
forming a first portion of a waveguide, in the trench, with a material comprising a second refractive index that is greater than the first refractive index;
forming a second portion of the waveguide on a top surface of the non-thermal oxide layer; and
depositing a cladding layer on the second portion of the waveguide.