US 12,228,604 B2
Monitoring an ideal diode
Sebastien Bernard, Hattersheim (DE); and Timo Dietz, Flörsheim (DE)
Assigned to Continental Automotive Technologies GmbH, Hannover (DE)
Appl. No. 18/000,606
Filed by Continental Automotive Technologies GmbH, Hannover (DE)
PCT Filed Jun. 2, 2021, PCT No. PCT/DE2021/200075
§ 371(c)(1), (2) Date Dec. 2, 2022,
PCT Pub. No. WO2021/244713, PCT Pub. Date Dec. 9, 2021.
Claims priority of application No. 10 2020 207 055.5 (DE), filed on Jun. 5, 2020.
Prior Publication US 2023/0228804 A1, Jul. 20, 2023
Int. Cl. G01R 31/26 (2020.01); G01R 19/165 (2006.01); H03K 17/687 (2006.01); B60T 17/22 (2006.01)
CPC G01R 31/2632 (2013.01) [G01R 19/16576 (2013.01); H03K 17/687 (2013.01); B60T 17/22 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method for monitoring an ideal diode having a MOSFET with a drain electrode, a source electrode and a gate electrode comprising:
controlling a source-gate voltage of the MOSFET such that the ideal diode can be changed over between an off state and an on state with a first target value for a source-drain voltage;
measuring the source-drain voltage and the source-gate voltage;
checking to determine whether the source-drain voltage reaches the first target value within predefined error limits in the on state of the ideal diode;
carrying out a test mode to set a second target value which is smaller than the first target value for the source-drain voltage;
checking to determine whether the source-gate voltage reaches an upper threshold value when in the test mode; and
outputting an error signal when at least one of the first target value and the upper threshold value is not reached.