US 12,228,499 B2
Pupil ellipsometry measurement apparatus and method and method of fabricating semiconductor device using the pupil ellipsometry measurement method
Jaehwang Jung, Suwon-si (KR); Yasuhiro Hidaka, Yokohama (JP); Mitsunori Numata, Yokohama (JP); Wookrae Kim, Suwon-si (KR); Jinseob Kim, Incheon (KR); and Myungjun Lee, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 17, 2023, as Appl. No. 18/111,229.
Application 18/111,229 is a continuation of application No. 17/204,059, filed on Mar. 17, 2021, granted, now 11,604,136.
Claims priority of application No. 10-2020-0114868 (KR), filed on Sep. 8, 2020.
Prior Publication US 2023/0204493 A1, Jun. 29, 2023
Int. Cl. G01N 21/21 (2006.01); G01N 21/95 (2006.01); G02B 27/10 (2006.01)
CPC G01N 21/211 (2013.01) [G01N 21/9501 (2013.01); G02B 27/10 (2013.01); G01N 2021/214 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
preparing the semiconductor device to be measured;
acquiring a hologram image of the semiconductor device by a pupil ellipsometry measurement apparatus;
reconstructing reflectance information based on the hologram image;
measuring the semiconductor device based on the reflectance information;
determining whether the semiconductor device is normal based on a result of the measuring; and
performing a subsequent process on the semiconductor device based on the semiconductor device being determined to be normal,
wherein the acquiring of the hologram image comprises:
producing interference light through self-interference of reflected light from the semiconductor device by a self-interference generator (SIG) included in the pupil ellipsometry measurement apparatus; and
detecting the hologram image of the interference light on a pupil plane by a first detector included in the pupil ellipsometry measurement apparatus.