US 12,227,867 B2
Plating apparatus for plating semiconductor wafer and plating method
Chen-Yu Tsai, Taoyuan (TW); Ku-Feng Yang, Hsinchu County (TW); and Wen-Chih Chiou, Miaoli County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 9, 2023, as Appl. No. 18/152,089.
Application 18/152,089 is a continuation of application No. 17/137,267, filed on Dec. 29, 2020, granted, now 11,585,008.
Prior Publication US 2023/0142163 A1, May 11, 2023
Int. Cl. C25D 21/04 (2006.01); C25D 7/12 (2006.01); C25D 17/00 (2006.01); C25D 17/08 (2006.01); C25D 21/10 (2006.01); H01L 21/768 (2006.01)
CPC C25D 21/04 (2013.01) [C25D 7/123 (2013.01); C25D 17/001 (2013.01); C25D 17/08 (2013.01); C25D 21/10 (2013.01); H01L 21/7684 (2013.01); H01L 21/76898 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plating apparatus, comprising:
a workpiece holder;
a plating bath underneath the workpiece holder; and
a clamp ring connected to the workpiece holder, wherein the clamp ring comprises first vents communicating an inner surface of the clamp ring and an outer surface of the clamp ring, wherein the clamp ring comprises a body portion and a protruding portion protruding from a bottom surface of the body portion, and the first vents penetrate through the protruding portion, the protruding portion comprises a plurality of protruding patterns disconnected from one another, and each of the first vents is defined by two adjacent protruding patterns and the bottom surface of the body portion.