| CPC C25D 17/008 (2013.01) [C25D 7/12 (2013.01); C25D 17/001 (2013.01); C25D 17/002 (2013.01); H01L 21/2885 (2013.01)] | 20 Claims |
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1. A method for plating a wafer, comprising:
directing a carrier solution to an anode in a plating chamber to produce plating ions;
directing a first flow of the plating ions towards a center portion of the wafer; and
directing a second flow of the plating ions towards edge portions of the wafer, wherein a rate of the first flow is greater than a rate of the second flow, wherein:
directing the first flow of the plating ions and the second flow of the plating ions comprises:
controlling a rate at which the plating ions flow from the anode toward the wafer using a structure comprising a membrane support comprising ion blocking regions that define a plurality of apertures,
apertures of the plurality of apertures in a first zone of the membrane support have a first diameter,
apertures of the plurality of apertures in a second zone of the membrane support have a second diameter,
apertures of the plurality of apertures in a third zone of the membrane support have a third diameter,
the third diameter is larger than the first diameter and larger than the second diameter, and
the third zone is between the first zone and the second zone.
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