US 12,227,848 B2
Substrate processing apparatus, method for processing substrate, and method for manufacturing semiconductor device
Takanori Fukusumi, Kuwana (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 24, 2021, as Appl. No. 17/445,736.
Claims priority of application No. 2021-013340 (JP), filed on Jan. 29, 2021.
Prior Publication US 2022/0243337 A1, Aug. 4, 2022
Int. Cl. C23C 18/06 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC C23C 18/06 (2013.01) [H01L 21/02282 (2013.01); H01L 21/0273 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A substrate processing apparatus for forming an annular film on an outer edge portion of a substrate, the substrate processing apparatus comprising:
a rotation support table capable of supporting and rotating the substrate;
a chemical liquid nozzle that is arranged above the outer edge portion of the substrate that is supported by the rotation support table, and through which a chemical liquid is applied to the outer edge portion; and
a solidified film forming unit that is arranged at least either on an upper side or on a lower side of the outer edge portion of the substrate that is supported by the rotation support table, and on a downstream side, of a position, in a direction of rotation of the substrate, where the chemical liquid nozzle is arranged, the solid film-forming unit solidifying the chemical liquid applied to the outer edge portion, to form a solidified film that forms a part of the annular film,
wherein
the chemical liquid nozzle has a plurality of ejection orifices individually arranged in a circular region so as to form a lattice pattern or a concentric pattern, through which the chemical liquid is ejected simultaneously.