| CPC C23C 16/45536 (2013.01) [C23C 16/0272 (2013.01); C23C 16/06 (2013.01); C23C 16/16 (2013.01); H01L 21/285 (2013.01); H01L 21/28568 (2013.01); H01L 21/3205 (2013.01); H01L 21/67017 (2013.01); H01L 21/76877 (2013.01)] | 8 Claims |

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1. A ruthenium film forming method in a substrate processing system, comprising:
a plurality of processing containers connected to a vacuum transfer chamber;
a controller configured to perform steps of;
forming an inhibition layer in a recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess in a depressurized state; and
forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess in which the inhibition layer is formed in the depressurized state,
wherein the forming the inhibition layer includes adsorbing chlorine to a top surface and an upper portion of a side surface of the recess without adsorbing chlorine to a bottom surface and a lower portion of the side surface of the recess, so that in the forming the ruthenium film, the chlorine adsorbed to the recess inhibits adsorption of the Ru-containing precursor to the recess, and
wherein the forming the inhibition layer and the forming the ruthenium film are alternately and repeatedly executed to perform bottom-up formation in which film formation gradually progresses upward from the bottom surface of the recess.
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