US 12,227,835 B2
Selective deposition of material comprising silicon and oxygen using plasma
Viraj Madhiwala, Helsinki (FI); Daniele Chiappe, Espoo (FI); Eva Tois, Espoo (FI); Marko Tuominen, Helsinki (FI); Charles Dezelah, Helsinki (FI); Shaoren Deng, Ghent (BE); Anirudhan Chandrasekaran, Scottsdale, AZ (US); YongGyu Han, Seoul (KR); Michael Givens, Oud-Heverlee (BE); Andrea Illiberi, Leuven (BE); and Vincent Vandalon, Heverlee (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding, B.V., Almere (NL)
Filed on Oct. 27, 2022, as Appl. No. 18/050,114.
Claims priority of provisional application 63/273,516, filed on Oct. 29, 2021.
Prior Publication US 2023/0140367 A1, May 4, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/401 (2013.01) [C23C 16/45536 (2013.01); H01J 37/32816 (2013.01); H01J 2237/182 (2013.01); H01J 2237/332 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising:
providing the substrate into a reaction chamber;
providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, wherein the first surface is selectively silylated, relative to the second surface, by a silyl blocking agent prior to the providing the metal or metalloid catalyst;
providing a silicon precursor, different from the silyl blocking agent and comprising an alkoxy silane compound, into the reaction chamber in a vapor phase; and
providing a plasma into the reaction chamber to form a reactive species configured to form the material comprising silicon and oxygen selectively on the first surface relative to the second surface.