US 12,227,828 B2
Structure for producing diamond and method for manufacturing same
Hideo Aida, Nagaoka (JP); Atsuhito Sawabe, Sagamihara (JP); Yutaka Kimura, Sagamihara (JP); Jun Mizuno, Tokyo (JP); and Ryuji Oshima, Tokyo (JP)
Assigned to National University Corporation Nagaoka University of Technology, Nagaoka (JP); Atsuhito Sawabe, Sagamihara (JP); Yutaka Kimura, Sagamihara (JP); WASEDA UNIVERSITY, Tokyo (JP); and DISCO Corporation, Tokyo (JP)
Filed by National University Corporation Nagaoka University of Technology, Nagaoka (JP); Atsuhito Sawabe, Sagamihara (JP); Yutaka Kimura, Sagamihara (JP); WASEDA UNIVERSITY, Tokyo (JP); and DISCO Corporation, Tokyo (JP)
Filed on Oct. 21, 2021, as Appl. No. 17/507,417.
Claims priority of application No. 2020-177489 (JP), filed on Oct. 22, 2020.
Prior Publication US 2022/0127719 A1, Apr. 28, 2022
Int. Cl. C23C 16/02 (2006.01); C23C 14/14 (2006.01); C23C 16/27 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); C30B 33/00 (2006.01)
CPC C23C 14/14 (2013.01) [C30B 23/025 (2013.01); C30B 25/186 (2013.01); C30B 29/02 (2013.01); C30B 33/00 (2013.01); Y10T 428/265 (2015.01); Y10T 428/31678 (2015.04)] 8 Claims
OG exemplary drawing
 
1. A structure for producing a diamond composed of a base substrate and an Ir thin film formed on the base substrate,
wherein the thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond;
wherein the melting point of the base substrate is 700° C. or higher;
wherein the Ir thin film is a thin film formed on a dummy substrate that is different from the base substrate, and the Ir thin film is formed on the base substrate by bonding the Ir thin film to the base substrate;
wherein all peak angles in an X-ray diffraction pattern of the Ir thin film shift randomly from all peak angles in an X-ray diffraction pattern of the base substrate; and
there is no relationship between a crystal orientation of the Ir thin film and a crystal orientation of the base substrate.