US 12,227,419 B2
Method for preparing patterned graphene
Hongyan Zhu, Shanghai (CN); Tianru Wu, Shanghai (CN); Jiebin Gu, Shanghai (CN); Chao Zhang, Shanghai (CN); and Boxiang Gao, Shanghai (CN)
Assigned to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed by SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed on Sep. 17, 2021, as Appl. No. 17/477,573.
Claims priority of application No. 202110645459.7 (CN), filed on Jun. 10, 2021.
Prior Publication US 2022/0396485 A1, Dec. 15, 2022
Int. Cl. C01B 32/186 (2017.01)
CPC C01B 32/186 (2017.08) [C01B 2204/22 (2013.01); C01P 2006/40 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for preparing patterned graphene, comprising:
providing a silicon carbide base, which comprises a first side and a second side opposite to the first side;
forming an accommodating passage in the silicon carbide base, wherein the accommodating passage comprises a first patterned trench on the first side of the silicon carbide base, a second patterned trench on the second side of the silicon carbide base, and a connection through hole penetrating the silicon carbide base and connected with the first patterned trench and second patterned trench;
providing a catalyst and an insulating substrate, and placing the catalyst in the accommodating passage, wherein the insulating substrate is in contact with the two opposite sides of the silicon carbide base to form a sandwich structure; and
placing the sandwich structure in a heating device and carrying out a catalytic reaction, so that the silicon carbide base is decomposed under the action of the catalyst, thereby obtaining patterned graphene on the insulating substrate.