	US 12,227,410 B2
	Semiconductor device and method for forming the same
Po Chen Yeh, New Taipei (TW); Yi-Hsien Chang, Changhua County (TW); Fu-Chun Huang, Hsinchu County (TW); Ching-Hui Lin, Taichung (TW); Chiahung Liu, Hsinchu (TW); Shih-Fen Huang, Hsinchu County (TW); and Chun-Ren Cheng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 5, 2024, as Appl. No. 18/404,922.
Application 18/404,922 is a division of application No. 17/838,023, filed on Jun. 10, 2022, granted, now 11,897,759.
Prior Publication US 2024/0140782 A1, May 2, 2024
Int. Cl. B81B 7/00 (2006.01); B81C 1/00 (2006.01)

CPC B81B 7/007 (2013.01) [B81C 1/00301 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81B 2207/097 (2013.01); B81C 2203/0792 (2013.01)]

20 Claims

1. A method of manufacturing a semiconductor device, comprising:

providing a substrate;

disposing a first device and a second device on the substrate;

forming a sacrificial layer over the first device and the second device;

forming a conductive pillar over the substrate;

forming a molding over the substrate and surrounding the first device, the second device, the conductive pillar and the sacrificial layer;

removing some portions of the molding to expose the sacrificial layer and the conductive pillar;

removing the sacrificial layer;

forming a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device; and

forming an opening extending through the RDL to expose a sensing area of the first device.