US 11,903,217 B2
Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device
Yen-Chieh Huang, Changhua County (TW); Hai-Ching Chen, Hsinchu (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 5, 2021, as Appl. No. 17/394,757.
Prior Publication US 2023/0038782 A1, Feb. 9, 2023
Int. Cl. H10B 51/30 (2023.01); H10B 51/00 (2023.01); H01L 49/02 (2006.01)
CPC H10B 51/30 (2023.02) [H01L 28/75 (2013.01); H10B 51/00 (2023.02); H01L 2924/1441 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an integrated chip, the method comprising:
depositing a semiconductor layer over a substrate;
forming a pair of source/drains along the semiconductor layer;
performing a first type of deposition process to deposit a first metal over the substrate to form a first metal layer over the substrate;
performing a second type of deposition process, different than the first type of deposition process, to deposit the first metal on the first metal layer to form a second metal layer on the first metal layer; and
depositing a ferroelectric layer over the second metal layer,
wherein the first metal of the second metal layer is deposited to have a [110] crystal orientation.