CPC H10B 51/20 (2023.02) [H01L 21/32133 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 51/30 (2023.02)] | 20 Claims |
15. A semiconductor device comprising:
a stack of word lines, wherein each word line comprises:
multiple seed layers in physical contact with each other;
multiple conductive elements on opposing sides of the multiple seed layers;
ferroelectric materials adjacent to respective ones of each of the word lines within the stack of word lines; and
semiconductor strips adjacent to respective ones of the ferroelectric materials.
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