US 11,903,211 B2
Methods of forming a microelectronic device including stair step structures
Lifang Xu, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Roger W. Lindsay, Boise, ID (US); and Shuangqiang Luo, Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 6, 2022, as Appl. No. 17/647,238.
Application 17/647,238 is a continuation of application No. 16/686,830, filed on Nov. 18, 2019, granted, now 11,239,248.
Prior Publication US 2022/0130850 A1, Apr. 28, 2022
Int. Cl. H10B 43/40 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H10B 41/41 (2023.01)
CPC H10B 43/40 (2023.02) [H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76826 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H10B 41/41 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A method of forming a microelectronic device, the method comprising:
forming isolated nitride structures on steps of stair step structures formed in a stack structure comprising a vertically alternating arrangement of first insulative materials and second insulative materials arranged in tiers;
forming a photoresist material over a lowermost stair step structure of the stair step structures prior to forming the isolated nitride structures on the steps of the stair step structures; and
replacing the isolated nitride structures and the second insulative materials with an electrically conductive material to respectively form conductive pad structures and electrically conductive structures.