US 11,903,201 B2
Integrated assemblies, and methods of forming integrated assemblies
Gordon A. Haller, Boise, ID (US); William R. Kueber, Boise, ID (US); Zachary D. Beaman, Boise, ID (US); Christopher G. Shea, Boise, ID (US); and Taehyun Kim, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 2, 2021, as Appl. No. 17/391,319.
Application 17/391,319 is a division of application No. 16/705,449, filed on Dec. 6, 2019, granted, now 11,088,165.
Prior Publication US 2021/0358950 A1, Nov. 18, 2021
Int. Cl. H01L 21/768 (2006.01); H10B 43/27 (2023.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method of forming an integrated assembly, comprising:
forming a first stack comprising a first layer, a second layer over the first layer, and a third layer over the second layer; the first and third layers comprising WSi, where the chemical formula indicates primary constituents rather than a specific stoichiometry; the second layer comprising TiN, where the chemical formula indicates primary constituents rather than a specific stoichiometry;
forming a first opening to extend through second and third layers of the first stack;
forming a liner within the first opening to line the first opening; the liner comprising a laminate configuration containing a second material over a first material, the first material comprising silicon dioxide and the second material comprising titanium nitride;
forming a tungsten-containing plug within the lined first opening;
forming a second stack over the first stack; the second stack having alternating first and second levels;
forming a second opening to pass through the second stack and to the tungsten-containing plug;
removing the tungsten-containing plug to extend the second opening;
forming first semiconductor material within the extended second opening;
forming a third opening to pass through the second stack, through the third layer, and to the second layer;
lining upper portions of the sidewall surfaces of the third opening with protective material, and then removing the second layer to form a conduit;
forming conductively-doped second semiconductor material within the conduit;
out-diffusing dopant from the conductively-doped second semiconductor material into the first semiconductor material, the out-diffused dopant extending upwardly to at least one of the first levels;
forming conductive material within the first levels; and
forming insulative material within the third opening.