US 11,903,199 B2
Through via structure, semiconductor device including the through via structure, and massive data storage system including the semiconductor device
Jeeyong Kim, Hanam-si (KR); and Junghwan Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 18, 2021, as Appl. No. 17/351,486.
Claims priority of application No. 10-2021-0036567 (KR), filed on Mar. 22, 2021.
Prior Publication US 2022/0302157 A1, Sep. 22, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A through via structure comprising:
a through via including
a metal pattern, the metal pattern extending in a vertical direction and fully enclosing a gap in the metal pattern, wherein the metal pattern includes a seam extending vertically from the gap in the metal pattern, and wherein an etching gas used to form the metal pattern remains in the gap in the metal pattern,
and
a barrier pattern on a sidewall and a lower surface of the metal pattern; and
a capping pattern contacting an upper surface of the through via, the capping pattern including a lowermost edge portion, and the lowermost edge portion of the capping pattern is not higher than a lowermost central portion of the capping pattern.