US 11,903,196 B2
Microelectronic devices including tiered stacks including conductive structures isolated by slot structures, and related electronic systems and methods
Yoshiaki Fukuzumi, Kanagawa (JP); Jun Fujiki, Tokyo (JP); Matthew J. King, Boise, ID (US); Sidhartha Gupta, Boise, ID (US); Paolo Tessariol, Arcore (IT); Kunal Shrotri, Boise, ID (US); Kye Hyun Baek, Boise, ID (US); Kyle A. Ritter, Boise, ID (US); Shuji Tanaka, Tokyo (JP); Umberto Maria Meotto, Rivoli (IT); Richard J. Hill, Boise, ID (US); and Matthew Holland, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 18, 2020, as Appl. No. 17/127,971.
Prior Publication US 2022/0199641 A1, Jun. 23, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/27 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures;
strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure;
an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers;
first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells;
second pillars extending through the additional stack structure and vertically overlying the strings of memory cells; and
additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars, a horizontal distance between one of the first pillars and one of the second pillars horizontally neighboring the one of the first pillars less than a horizontal distance between the one of the second pillars and an additional one of the second pillars neighboring the one of the second pillars.