US 11,903,186 B2
Method for manufacturing semiconductor device with bit line contacts of different pitches
Yu-Ting Lin, New Taipei (TW); and Huei-Ru Lin, Toufen (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 21, 2022, as Appl. No. 17/726,004.
Prior Publication US 2023/0345709 A1, Oct. 26, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/485 (2023.02) [H10B 12/033 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate comprising a plurality of active areas separated from each other;
forming first mask structures on the substrate;
forming a first protective layer covering the first mask structures and the substrate, wherein the first protective layer defines an area exposing a portion of the first mask structures and the substrate, and the area defined by the first protective layer has a zigzag edge in a top view; and
performing a first etching process to form trenches defined by the substrate.