US 11,901,874 B2
Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
Ventsislav Yantchev, Sofia (BG)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Oct. 13, 2020, as Appl. No. 17/069,379.
Application 17/069,379 is a continuation of application No. 16/819,623, filed on Mar. 16, 2020, granted, now 10,868,510.
Application 16/819,623 is a continuation in part of application No. 16/689,707, filed on Nov. 20, 2019, granted, now 10,917,070.
Application 16/689,707 is a continuation of application No. 16/230,443, filed on Dec. 21, 2018, granted, now 10,491,192, issued on Nov. 26, 2019.
Claims priority of provisional application 62/818,571, filed on Mar. 14, 2019.
Claims priority of provisional application 62/753,815, filed on Oct. 31, 2018.
Claims priority of provisional application 62/748,883, filed on Oct. 22, 2018.
Claims priority of provisional application 62/741,702, filed on Oct. 5, 2018.
Claims priority of provisional application 62/701,363, filed on Jul. 20, 2018.
Claims priority of provisional application 62/685,825, filed on Jun. 15, 2018.
Prior Publication US 2021/0028758 A1, Jan. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/56 (2006.01); H03H 9/64 (2006.01)
CPC H03H 9/02228 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02102 (2013.01); H03H 9/02559 (2013.01); H03H 9/02574 (2013.01); H03H 9/175 (2013.01); H03H 9/25 (2013.01); H03H 9/564 (2013.01); H03H 9/6406 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal piezoelectric layer having front and back surfaces, the back surface attached to the surface of the substrate either directly or via at least one intermedia layer, with a portion of the single-crystal piezoelectric layer forming a diaphragm over a cavity;
an interdigital transducer (IDT) at the single-crystal piezoelectric layer such that interleaved fingers of the IDT are at the diaphragm; and
a dielectric layer on one of the front surface and the back surface of the single-crystal piezoelectric layer, with the dielectric layer having a thickness of a half lambda.